|Field Effect Transistors|
In Figure 1, the connection between source and gate passes through the N-doped portion of the silicon. The width of the channel
is a measure for the conductivity between the source and the gate. If the gate is positive, then negative carriers are removed
from the channel, which then becomes smaller and less conductive. If the gate becomes more negative, then the channel becomes wider
and more conductive. We can increase the efficiency of this design by placing another copy of the gate on the other side of the channel.
Figure 1: N-Channel JFET
See also the Scots guide to Electronics on JFET, the PBS series on transistors, or at Thinkquest.
Figure 2: N-Channel MOSFET
|© 2003 Thomas Schwarz, S.J., COEN, SCU SCU COEN T. Schwarz COEN 180|